PART |
Description |
Maker |
2SC2369 2SC1560 2SC1988 2SC2570 NE02100 NE02103 NE |
NPN SILICON HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH FREQUNY TRANSISTOR NPN硅晶体管高FREQUNY NPN SILICON HIGH FREQUNY TRANSISTOR NPN硅晶体管FREQUNY
|
NEC[NEC] NEC Corp. Honeywell International, Inc. NEC, Corp.
|
2SC3734 2SC3734-L 2SC3734-T1B 2SC3734-T2B |
Silicon transistor HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
|
NEC[NEC]
|
2SA1462 2SA1462-T1B 2SA1462-L 2SA1462-T2B |
HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD Silicon transistor
|
NEC
|
2N4347 2N3442 |
High voltage silicon N-P-N transistor. 140V, 100W. High voltage silicon N-P-N transistor. 160V, 117W.
|
General Electric Solid State
|
2SA1647-Z 2SA1647-15 |
SILICON POWER TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
|
Renesas Electronics Corporation
|
2SC2517 |
Silicon transistor NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
|
NEC Corp.
|
2SC4553 |
Silicon transistor NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
|
NEC[NEC]
|
2SC4551 |
Silicon transistor NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
|
NEC[NEC]
|
2SC4176 2SC4176-T1 2SC4176-T2 |
Silicon transistor HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR
|
NEC[NEC]
|
2SA1075 2SA1076 |
160V PNP silicon general purpose high speed power transistor SILICON HIGH SPEED POWER TRANSISTOR
|
FUJITSU[Fujitsu Media Devices Limited] Fujitsu Microelectronics
|
BFS483 Q62702-F1574 Q62702F1574 |
NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifier at colector current from 2mA to 28mA) NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) NPN硅射频晶体管(对于低噪声,高增益的colector2mA至二十八毫安目前的宽带放大器 NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR TRANSISTOR R.F SOT363 From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|